GROWTH AND CHARACTERIZATION OF CuInSe2 THIN FILMS

Abstract

The present article reports about synthesis of copper indium di-selenide (CuInSe2) thin films by large area
depositing, user friendly and cost effective solution growth technique at room temperature on glass substrate. These as
deposited thin films are characterized for physicochemical as well as optoelectronic properties using X-ray diffraction
(XRD), energy dispersive X-ray spectrum analysis (EDAX), scanning electron microscopy (SEM), UV-Vis absorption
spectra and I-V studies under dark and illumination conditions. From XRD pattern (112), (220) and (312) planes are
obtained confirming the CuInSe2 phase formation, the elemental composition is confirmed from the observed elemental
proportion in EDAX spectra. Uneven distribution of granular, spherical, hazy particulates is observed in SEM images.
The UV-Vis absorption spectrum shows an absorption peak centered at approximately 380 nm confirming the exciton
induced charge transfer process. Electrical properties measured from the I-V response shows semiconducting behavior of
CuInSe2 films with an average charge mobility of around 260 cm2 Vs−1