DESIGN, SIMULATION & COMPARISON OF NOVEL TG8T SRAM WITH TRADITIONAL SRAM DESIGN

Abstract

As technology is increasing rapidly, the usage of low power devices has become more usable. One among such is
transmission gate 8T SRAM. Static random access memory has now a day’s become an important feature in the VLSI
chip design. SRAM has become a sustainable research due to its fast development for low power. Static random access
memory plays most prominent role in the microprocessor world, but as the technology is scaling down in nanometers,
leakage parameters and delay parameters are the most common problems for SRAM cell which is basically designed for
very low power applications. This paper presents architecture of TG8T SRAM cell with an improved version of existing
8T SRAM cell, where all pass transistors are replaced with transmission gates.